ON Semiconductort
High Voltage Transistor
Surface Mount
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ T
A
= 25掳C
(1)
Storage Temperature Range
Junction Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
Value
300
300
6.0
500
1.5
鈥?5 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
掳C
掳C
PZTA42T1
ON Semiconductor Preferred Device
SOT鈥?23 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
4
1
2
3
DEVICE MARKING
P1D
CASE 318E-04, STYLE 1
TO-261AA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient
(1)
Symbol
R
胃JA
Max
83.3
Unit
掳C/W
COLLECTOR 2,4
BASE
1
EMITTER 3
ELECTRICAL CHARACTERISTICS
(T
A
= 25掳C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(2)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
= 100
碌Adc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 100
碌Adc,
I
C
= 0)
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
Emitter-Base Cutoff Current
(V
BE
= 6.0 Vdc, I
C
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
300
300
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
Vdc
Vdc
Vdc
碌Adc
碌Adc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in
2
.
2. Pulse Test Conditions, t
p
= 300
碌s, 未
= 0.02.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 4
Publication Order Number:
PZTA42T1/D
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