Preliminary 10W
Power Transistor
Product Features
鈥?High Output Power
P1dB = 40dBm(Typ.)@2.14GHz
鈥?High Efficiency
鈥?High Power Gain
G1dB = 17dB(Typ.)@900MHz
G1dB = 13dB(Typ.)@2.14GHz
鈥?High Linearity
鈥?Hermetically sealed package
鈥?GaN HFET
Description
RT240PD
Application
鈥?Repeater
鈥?RF Sub-Systems
鈥?Base Station
鈥?Converter
鈥?IMT-2000
鈥?ISM
鈥?MMDS
鈥?Wi-Fi, Wi-max
The RT240PD is designed for base stations and cell extenders as cellular
and GSM, PCS, IMT-2000, ISM, MMDS, Wi-Fi, Wi-MAX frequency systems,
GaN HFET is used and attached on a gold sub carrier.
Typical Specifications
Parameter
Frequency (MHz)
Small Signal Gain (dB)
VSWR (Input / Output)
1dB Compression Point (dBm)
*
*
Specifications
900
17
1800
14
2140
13
2.0 : 1
40
33
29
33
29
+28V / 600mA
31
28
26
50 @ 27dBm/tone
-25鈩?~ +70鈩?/div>
48 @ 27dBm/tone
39
2640
12
3500
10
CDMA Power (1FA) (dBm)
CDMA Power (7FA) (dBm)
Vdd / Ids (CDMA Only)
**
**
**
WCDMA Power (1FA) (dBm)
WCDMA Power (2FA) (dBm)
WCDMA Power (4FA) (dBm)
OIP3 (dBm)
Operating Temp Range
* IS-95 (
卤750kHz
offset@-29dBc ACPR,
卤1.98MHz
offset@-39dBc ACPR )
** Test Model 1ch/64DPCH (
卤5MHz
offset@-45dBc ACLR,
卤10MHz
offset@-50dBc ACLR )
All specifications may change without notice.
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