鈶?/div>
0.2
Unit锛歮m
FEATURE
銉籌nput impedance is high, and not necessary to consider a drive
electric current.
銉籚th is low, and drive by low voltage is possible. Vth=0.6锟?frac12;锟?.2V
銉籐ow on Resistance. Ron=2惟(TYP)
銉籋igh speed switching.
銉籗mall package for easy mounting.
2.0
APPLICATION
high speed switching , Analog switching
0.65
0.13
0锟?frac12;锟?.1
鈶?/div>
Tr.1
0.9
0.65
鈶?/div>
鈶?/div>
Tr.2
TERMINAL
CONNECTOR
鈶狅細SOURCE1
鈶★細GATE1
鈶細DRAIN2
鈶ｏ細SOURCE2
鈶わ細GATE2
鈶?DRAIN1
JEITA锛歋C-88
鈶?/div>
鈶?/div>
鈶?/div>
MAXIMUM RATING (Ta=25鈩?
SYMBOL
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
PARAMETER
RATING
UNIT
V
V
mA
mW
鈩?/div>
鈩?/div>
6
5
4
MARKING
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation锛圱a=25鈩冿級
Channel temperature
Range of Storage temperature
-20
卤8
-200
150
锛?25
-55锟?frac12;锟斤紜125
.
.
锛紦 锛?/div>
锛?/div>
2
3
ISAHAYA ELECTRONICS CORPORATION
RT3J33M相关型号PDF文件下载
-
型号
版本
描述
厂商
下载
-
英文版
Composite Transistor
ISAHAYA
-
英文版
Composite Transistor
ISAHAYA
-
英文版
Composite Transistor
ISAHAYA
1
2
3
4
