RTF011P02
Transistors
2.5V Drive Pch MOS FET
RTF011P02
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
TUMT3
0.85Max.
2.0
Features
1) Low On-resistance.
2) High speed switching.
0.3
(3)
0.2
0.77
1.7
0.2
(1)
(2)
2.1
0~0.1
0.65 0.65
1.3
0.17
Applications
Switching
(1) Gate
(2) Source
(3) Drain
Abbreviated symbol : WW
Packaging specifications
Package
Type
RTF011P02
Code
Basic ordering unit (pieces)
Taping
TL
3000
Inner circuit
(3)
(1)
鈭?
鈭?
(2)
鈭?
ESD PROTECTION DIODE
鈭?
BODY DIODE
(1) Gate
(2) Source
(3) Drain
Absolute maximum ratings
(Ta=25掳C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
鈭?
I
S
I
SP
鈭?
P
D
鈭?
Tch
Tstg
Limits
鈭?0
卤12
卤1
卤4
鈭?.4
鈭?
0.8
150
鈭?5
to
+150
Unit
V
V
A
A
A
A
W
掳C
掳C
Thermal resistance
Parameter
Channel to ambient
鈭?/div>
Mounted on a ceramic board
Symbol
Rth(ch-a)
鈭?/div>
Limits
156
Unit
掳C/W
0.15Max.
1/2
1
2
3
