S1PD Datasheet

  • S1PD

  • High Current Density Surface Mount Glass-Passivated Rectifie...

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  • VISHAY   VISHAY

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S1PA thru S1PJ
New Product
Vishay Semiconductors
formerly General Semiconductor
Case Style SMP
Cathode band
High Current Density Surface Mount
Glass-Passivated Rectifiers
Reverse Voltage
50 to 600 V
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Forward Current
1.0 A
Very low profile - typical height of 1.0mm
Ideal for automated placement
Glass passivated chip junction
For use in rectification, power supply, home appliances
and telecommunication
鈥?High temperature soldering:
260掳C maximum/10 seconds at terminals
鈥?Meets MSL level 1 per J-STD-020C
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Mechanical Data
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30)
0.000 (0.00)
Case:
SMP
Terminals:
Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
0.018 (0.45)
0.006 (0.15)
Mounting Pad Layout
Dimensions in inches
and (millimeters)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.012 (0.30) REF
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.100
(2.54)
0.050
(1.27)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
Maximum Ratings & Thermal Characteristics
Ratings at 25掳C ambient temperature unless otherwise specified.
Parameter
Device marking code
Maximum reverse voltage
Maximum average forward rectified current Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
Typical thermal resistance
(1)
Operating junction temperature
Storage temperature
Symbol
V
RM
I
F(AV)
I
FSM
R
胃JA
R
胃JL
R
胃JC
T
J
,
T
STG
S1PA
SA
50
S1PB
SB
100
S1PD
SD
200
1
30
105
15
20
150
鈥?5 to +150
S1PG
SG
400
S1PJ
SJ
600
Unit
V
A
A
掳C/W
掳C
掳C
Electrical Characteristics
Ratings at 25掳C ambient temperature unless otherwise specified.
Parameter
Symbol
Maximum instantaneous forward voltage
(2)
at I
F
=1A, T
J
=25掳C
V
F
at I
F
=1A, T
J
=125掳C
Maximum reverse current
T
J
= 25掳C
I
R
at rated VR
(2)
T
J
=125掳C
Typical reverse recovery time at
trr
at I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
Typical junction capacitance at 4.0V, 1MHz
C
J
Value
1.1
0.95
1.0
50
1.8
6.0
Unit
V
碌A
碌s
pF
Notes:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R
胃JL
is measured at the ter-
minal of cathode band. R
胃JC
is measured at the top centre of the body
(2) Pulse test: 300碌s pulse width, 1% duty cycle
Document Number 88917
23-Sep-04
www.vishay.com
1

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