SG50N06S, SG50N06DS
Discrete IGBTs
E
C
Dimensions SOT-227(ISOTOP)
Dim.
A
B
C
D
Millimeter
Min.
Max.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
37.80
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
3.30
0.780
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.20
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
4.57
0.830
Inches
Min.
Max.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.489
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
0.130
19.81
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
0.180
21.08
G=Gate, C=Collector,
E=Emitter
E
G
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
SG50N06S
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
SG50N06DS
Test Conditions
Maximum Ratings
600
600
卤20
卤30
75
50
200
I
CM
=100
@ 0.8 V
CES
250
-55...+150
150
-55...+150
Unit
V
V
T
J
=25
o
C to 150
o
C
T
J
=25
o
C to 150
o
C; R
GE
=1 M ;
Continuous
Transient
T
C
=25
o
C
T
C
=90
o
C
T
C
=25
o
C, 1 ms
A
A
W
o
V
GE
=15V; T
VJ
=125
o
C; R
G
=10
(RBSOA)
Clamped inductive load, L=30uH
P
C
T
C
=25
o
C
T
J
T
JM
T
stg
M
d
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Terminal connection torque(M4)
C
1.5/13
1.5/13
30
300
Nm/Ib.in.
g
o
C
(T
J
=25
o
C,
unless otherwise specified)
Symbol
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
Test Conditions
I
C
=250uA; V
GE
=0V
I
C
=250uA; V
CE
=V
GE
V
CE
=0.8V
CES
;
V
GE
=0V;
T
J
=125
o
C
V
CE
=0V; V
GE
=卤20V
I
C
=I
C90
; V
GE
=15V
Characteristic Values
min.
600
2.5
5
200
1
卤100
2.5
typ.
max.
V
V
uA
mA
nA
V
Unit
1
2
