Si3483DV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
鈭?0
D
TrenchFETr Power MOSFET
I
D
(A)
鈭?.2
鈭?.0
r
DS(on)
(W)
0.035 @ V
GS
=
鈭?0
V
0.053 @ V
GS
=
鈭?.5
V
APPLICATIONS
D
Load Switch
TSOP-6
Top View
1
3 mm
6
5
(4) S
(3) G
2
3
4
(1, 2, 5, 6) D
2.85 mm
P-Channel MOSFET
Ordering Information: Si3483DV-T1鈥擡3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
5 secs
Steady State
鈭?0
"20
Unit
V
鈭?.2
鈭?.9
鈭?5
鈭?.7
2.0
1.3
鈭?5
to 150
鈭?.7
鈭?.7
A
鈭?.95
1.14
0.73
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.
Document Number: 72078
S-40238鈥擱ev. B, 16-Feb-04
www.vishay.com
t
v
5 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
C/W
1