Si4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
I
D
(A)
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
30
V
SD
(v)
Diode Forward Voltage
0.50 V @ 1.0 A
I
F
(A)
2.0
D
1
D
1
D
2
D
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
Ordering Information: Si4834DY
Si4834DY-T1 (with Tape and Reel)
S
1
N-Channel MOSFET
S
2
N-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
Schottky Diode
G
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
10 secs
30
"20
7.5
Steady State
Unit
V
5.7
4.6
30
A
0.9
1.1
0.7
- 55 to 150
W
_C
I
D
I
DM
I
S
P
D
T
J
, T
stg
6.0
1.7
2.0
1.3
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET
Parameter
t
v
10 sec
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1鈥?x 1鈥?FR4 Board.
Document Number: 71183
S-31062鈥擱ev. B, 26-May-03
www.vishay.com
Steady-State
Steady-State
R
thJA
R
thJC
Schottky
Typ
53
93
35
Symbol
Typ
52
93
35
Max
62.5
110
40
Max
62.5
110
40
Unit
_C/W
C/W
1