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10 Watt Output P
1dB
Single Polarity Supply Voltage
High Gain: 18 dB Typical
High Efficiency
Advanced, XeMOS II LDMOS
Integrated ESD Protection, Class 1A
Applications
Base Station PA driver
Repeater
RFID
Case Flange = Ground
RF Specifications
Parameter
Frequency
Gain
Efficiency
IRL
Description: Test Conditions in Sirenza Evaluation
Board V
DS
= 28.0V, I
DQ
= 125mA, T
Flange
= 25潞C
Frequency of Operation
10 Watt CW, 902MHz-928MHz
Drain Efficiency at 10 Watt CW, 915MHz
Input Return Loss, 10 Watt Output Power, 915MHz
3 Order IMD at 10 Watt PEP (Two Tone), 915MHz
rd
Unit
MHz
dB
%
dB
dBc
Watt
Watt
Watt
Min
-
17
40
-
-
10
1.8
3.2
Typ
-
18
47
-15
-28
11
1.6
3.6
Max
2700
-
-
-10
-26
-
-
-
Linearity
1dB Compression (P
1dB
), 915MHz
ACPR=-55dB, IS-95
ACPR=-45dB, IS-95
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user鈥檚 own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-103754 Rev D
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