SSM5N05FU Datasheet

  • SSM5N05FU

  • High Speed Switching Applications

  • 117.61KB

  • Toshiba

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SSM5N05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM5N05FU
High Speed Switching Applications
鈥?/div>
鈥?/div>
鈥?/div>
Optimum for high-density mounting in small packages
Low on-resistance: R
on
= 0.8
鈩?/div>
(max) (@V
GS
= 4 V)
: R
on
= 1.2
鈩?/div>
(max) (@V
GS
= 2.5 V)
Low gate threshold voltage
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta
=
25掳C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
T
ch
T
stg
Rating
20
卤12
400
800
300
150
鈭?5~150
Unit
V
V
mA
mW
掳C
掳C
Drain power dissipation (Ta
=
25掳C)
Channel temperature
Storage temperature range
JEDEC
JEITA
鈥?/div>
鈥?/div>
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2L1B
high temperature/current/voltage and the significant change in
Weight: 6 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm
25.4 mm
1.6 t, Cu Pad: 0.32 mm
5)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01

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