鈩?/div>
- 2.5A SO-8
2.7V-DRIVE STripFET鈩?II MOSFET PLUS SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
20 V
SCHOTTKY
I
F(AV)
3A
R
DS(on)
< 0.20鈩?(@4.5V)
< 0.25鈩?(@2.7V)
V
RRM
30 V
I
D
2.5 A
V
F(MAX)
0.51 V
STS2DPFS20V
DESCRIPTION
This product associates the latest low voltage
StripFET艙 in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
Parameter
Dain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kW)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25掳C
Drain Current (continuous) at T
C
= 100掳C
Drain Current (pulsed)
Total Dissipation at T
C
= 25掳C
Value
20
20
卤 12
2.5
1.58
10
2
Unit
V
V
V
A
A
A
W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Parameter
Value
Unit
Repetitive Peak Reverse Voltage
RMS Forward Curren
Average Forward Current
Surge Non Repetitive Forward Current
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
T
L
=125
o
C
未
=0.5
tp= 10 ms
Sinusoidal
tp=100
碌s
30
20
3
75
1
10000
V
A
A
A
A
V/碌s
I
F(RMS)
I
F(AV)
I
FSM
I
RSM
dv/dt
(鈥? Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
November 2002
.
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