鈩?/div>
V
RRM
40 V
I
D
4A
V
F(MAX)
0.44 V
SO-8
DESCRIPTION
This product associates the latest low voltage
STripFET鈩?in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
E
AS
(1)
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25掳C
Drain Current (continuos) at T
C
= 100掳C
Drain Current (pulsed)
Total Dissipation at T
C
= 25掳C
Single Pulse Avalanche Energy
Value
20
20
卤 20
4
3.4
16
2
20
Unit
V
V
V
A
A
A
W
mJ
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
dv/dt
Parameter
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
Surge Non Repetitive Forward Current
Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
TL = 120掳C
未
= 0.5
tp = 10 ms
Sinusoidal
tp = 2
碌s
F = 1 kHz
Value
40
10
3
75
1
10000
Unit
V
A
A
A
A
V/碌s
(鈥?Pulse width limited by safe operating area
(1) Starting T
j
= 25掳C, I
D
= 2.5 A, V
DD
= 20 V
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
February 2001
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