SUD25N06-45L
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY
V
DS
(V)
60
r
DS(on)
(W)
0.035 @ V
GS
= 10 V
0.045 @ V
GS
= 4.5 V
I
D
(A)
25
22
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD25N06-45L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
60
"20
25
16
30
25
25
31
50
2.5
a
鈥?5 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a. Surface mounted on 1鈥?x 1鈥?FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70274
S-57253鈥擱ev. E, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
R
thJC
Limit
60
3.0
Unit
_C/W
2-1
1
2
3
4
