SUP/SUB85N02-03
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
20
r
DS(on)
(W)
0.003 @ V
GS
= 4.5 V
0.0034 @ V
GS
= 2.5 V
0.0038 @ V
GS
= 1.8 V
I
D
(A)
a
85
85
85
TO-220AB
TO-263
D
G
DRAIN connected to TAB
G
G D S
Top View
Ordering Information:
SUP85N02-03鈥擡3 (Lead Free)
D S
S
N-Channel MOSFET
Top View
Ordering Information:
SUB85N02-03鈥擡3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
20
"8
85
85
240
30
45
250
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes:
a. See SOA curve for voltage derating.
b. Duty cycle
v
1%.
c. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 71421
S-32619鈥擱ev. B, 29-Dec-03
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
1