Ordering number :EN5135A
SVC371
Diffused Junction Type Sillicon Diode
Composite Varactor Diode for AM Receiver
Low-Voltage Electronic Tuning Applications
Features
路 Excellent large-input characteristics because of dual-
varactor composite type.
路 The number of manufacturing processes can be
reduced and automatic mounting is possible because
of composite type.
路 High capacitance ratio and high quality factor.
路 Facilitates tuning circuit configuration because the
cathodes of three dual-type elements are separated
from each other, resulting in almost no interelement
coupling.
路 Possible to offer the SVC371 devices in a tape reel
packaging.
路 Surface mount type.
Package Dimensions
unit:mm
1268
[SVC371]
1:Anode
2:Cathode
3:Anode
4:Cathode
5:Anode
6:Anode
7:Cathode
8:Anode
SANYO:SOP8
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature
Symbol
VR
Tj
Tstg
Conditions
Ratings
16
125
鈥?5 to +125
Unit
V
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Breakdown Voltage
Reverse Current (One diode)
Interterminal Capacitance (Average)
Symbol
V(BR)R
IR
C1V
C6V
C8V
Quality Factor
Capacitance Ratio
Matching Tolerance*2
Q
CR
鈭咰
m
IR=10碌A
VR=20V
VR=1V, f=1MHz*1
VR=6V, f=1MHz
VR=8V, f=1MHz
VR=1V, f=1MHz
C1V/C8V, f=1MHz
| CRFN鈥揅OSC鈥?.25pF | / COSC, VR=1V, f=1MHz
VR=6V, f=1MHz
VR=8V, f=1MHz
19
200
18.5
2.5
3.0
3.0
460*
50
26
Conditions
Ratings
min
16
100
540*
typ
max
Unit
V
nA
pF
pF
pF
%
%
%
Note)*1:1MHz signal:20mVrms.
Note)*2:Calculate using the average of tow diodes contained in each element of OSC, RF1, RF2.
Note)*:The SVC371 is classified by C1V as follows:
Electrical Connection
Rank
R
S
T
C1V(pF)
460.0 to 491.0
482.0 to 515.0
505.0 to 540.0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/52595GI (KOTO)/TA-0335 No.5135-1/3
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