BIPOLAR ANALOG INTEGRATED CIRCUIT
碌
PC8182TB
3 V, 2.9 GHz SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The
碌
PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
This IC is manufactured using our 30 GHz f
max
UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
鈥?Supply voltage: V
CC
= 2.7 to 3.3 V
鈥?Circuit current: I
CC
= 30 mA TYP. @ V
CC
= 3.0 V
鈥?Medium output power: P
O (1dB)
= +9.5 dBm TYP. @ f = 0.9 GHz
P
O (1dB)
= +9.0 dBm TYP. @ f = 1.9 GHz
P
O (1dB)
= +8.0 dBm TYP. @ f = 2.4 GHz
鈥?Power gain: G
P
= 21.5 dB TYP. @ f = 0.9 GHz
G
P
= 20.5 dB TYP. @ f = 1.9 GHz
G
P
= 20.5 dB TYP. @ f = 2.4 GHz
鈥?Upper limit operating frequency: f
u
= 2.9 GHz TYP. @ 3 dB bandwidth
鈥?High-density surface mounting: 6-pin super minimold package (2.0
脳
1.25
脳
0.9 mm)
APPLICAION
鈥?Buffer amplifiers on 1.9 to 2.4 GHz mobile communications system
ORDERING INFORMATION (Solder Contains Lead)
Part Number
Package
6-pin super minimold
Marking
C3F
Supplying Form
鈥?Embossed tape 8 mm wide
鈥?Pin 1, 2, 3 face the perforation side of the tape
鈥?Qty 3 kpcs/reel
碌
PC8182TB-E3
Remark
To order evaluation samples, contact you鈥檙e nearby sales office. Part number for sample order:
碌
PC8182TB
ORDERING INFORMATION (Pb-Free)
Part Number
Package
6-pin super minimold
Marking
C3F
Supplying Form
鈥?Embossed tape 8 mm wide
鈥?Pin 1, 2, 3 face the perforation side of the tape
鈥?Qty 3 kpcs/reel
碌
PC8182TB-E3-AZ*
*NOTE:
Please refer to the last page of this data sheet, 鈥淐ompliance with EU Directives鈥?for Pb-Free RoHS
Compliance Information.
Document No. PU10206EJ01V0DS (1st edition)
(Previous No. P14543EJ2V0DS00)
Date Published December 2002 CP (K)
漏
NEC Compound Semiconductor Devices 1999,
2002