VTB Process Photodiodes
VTB8341
PACKAGE DIMENSIONS
inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a thick
layer of clear epoxy. These diodes have very
high shunt resistance and have good blue
response.
CASE 11 CERAMIC
CHIP ACTIVE AREA: .008 in
2
(5.16 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20掳C to 75掳C
-20掳C to 75掳C
ELECTRO-OPTICAL CHARACTERISTICS @ 25掳C
(See also VTB curves, pages 21-22)
VTB8341
SYMBOL
I
SC
TC I
SC
V
OC
TC V
OC
I
D
R
SH
TC R
SH
C
J
S
R
位
range
位
p
V
BR
胃
1/2
NEP
D*
CHARACTERISTIC
Short Circuit Current
I
SC
Temperature Coefficient
Open Circuit Voltage
V
OC
Temperature Coefficient
Dark Current
Shunt Resistance
R
SH
Temperature Coefficient
Junction Capacitance
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
2
TEST CONDITIONS
Min.
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
320
920
40
卤60
2.4 x 10
-14
(Typ.)
12
(Typ.)
UNITS
Typ.
60
.12
490
-2.0
100
1.4
-8.0
1.0
.10
1100
.23
Max.
碌A
%/掳C
mV
mV/掳C
pA
G鈩?/div>
%/掳C
nF
A/W
nm
nm
V
Degrees
W
鈦?/div>
Hz
cm Hz / W
35
9.7 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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