VVZ 12
Three Phase Half Controlled
Rectifier Bridge
I
dAVM
= 20 A
V
RRM
= 1200-1600 V
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
Type
5
7
4
2
1
6
3
1
2
5
3
6
4
7
8
VVZ 12-12io1
VVZ 12-14io1
VVZ 12-16io1
8
Symbol
I
dAV
I
dAVM
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
K
= 100掳C; module
module
per leg
T
VJ
= 45掳C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
15
20
12
110
115
100
105
60
55
50
45
150
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/ms
Features
q
q
q
q
q
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Soldering terminals
UL registered E 72873
Applications
q
I
2
t
T
VJ
= 45掳C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
q
q
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
Electric drives and auxiliaries
Advantages
q
q
q
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 50 A
f =400 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/3 藴 I
dAV
di
G
/dt = 0.3 A/ms
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
楼;
method 1 (linear voltage rise)
t
p
= 30
ms
t
p
= 500
ms
t
p
= 10 ms
拢
拢
拢
500
1000
10
A/ms
V/ms
V
W
W
W
W
掳C
掳C
掳C
V~
V~
Nm
lb.in.
g
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Dimensions in mm (1 mm = 0.0394")
T
VJ
= T
VJM
I
T
= I
TAVM
10
5
1
0.5
-40...+125
125
-40...+125
50/60 Hz, RMS
I
ISOL
拢
1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32 UNF)
3000
3600
2-2.5
18-22
28
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2000 IXYS All rights reserved
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