SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 鈥?JANUARY 1998
FEATURES
* Close Tolerance C-V Characteristics
* High Tuning Ratio
* Low I
R
Enabling Excellent Phase Noise Performance
(I
R
Typically <200pA at 25V)
ZC830/A/B
to
ZC836/A/B
1
1
3
2
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Forward Current
Power Dissipation at T
amb
=25掳C
Operating and Storage Temperature Range
SYMBOL
I
F
P
tot
T
j
:T
stg
MAX
200
330
SOT23
UNIT
mA
mW
掳C
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
=25掳C)
PARAMETER
Reverse Breakdown
Voltage
Reverse Voltage Leakage
Temperature Coefficient
of Capacitance
SYMBOL
V
BR
I
R
MIN
25
0.2
0.03
10
0.04
TYP
MAX
UNIT CONDITIONS
V
nA
%/掳C
I
R
=10
碌
A
V
R
=20V
V
R
=3V, f=1MHz
畏
TUNING CHARACTERISTICS (at T
amb
=25掳C)
PART NO
Nominal Capacitance (pF)
V
R
=2V, f=1MHz
MIN
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
9.0
13.5
19.8
29.7
42.3
61.2
90.0
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
11.0
16.5
24.2
36.3
51.7
74.8
110.0
Minimum
Q
@ V
R
=3V
f=50MHz
300
300
200
200
200
100
100
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
6.0
6.5
6.5
6.5
6.5
6.5
Note:
No suffix
卤
20% (e.g. ZC830), suffix B
卤
5% (e.g. ZC830B)
Spice parameter data is available upon request for this device
1
2
