SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 2 - APRIL 2000
ZDT1053
C
1
C
1
C
2
C
2
PARTMARKING DETAIL 聳 T1053
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
T
j
:T
stg
VALUE
150
75
5
20
5
500
-55 to +150
UNIT
V
V
V
A
A
mA
掳C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25掳C*
Any single die 聯on聰
Both die 聯on聰 equally
Derate above 25掳C*
Any single die 聯on聰
Both die 聯on聰 equally
Thermal Resistance - Junction to Ambient*
Any single die 聯on聰
Both die 聯on聰 equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ 掳C
mW/ 掳C
掳C/ W
掳C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 363
1
2
3
