NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 聳 MARCH 94
FEATURES
* High voltage
* Low current
ZTX341
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25掳C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
100
100
5
100
20
300
-55 to +175
UNIT
V
V
V
mA
mA
mW
掳C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25掳C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collecor-Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
30
80
10
MHz
pF
MIN.
100
100
5
0.5
0.5
10
0.5
1.0
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
CONDITIONS.
I
C
=10
碌
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
碌
A, I
C
=0
V
CB
=80V, I
E
=0
V
CE
=80V, R
BE
=50K
鈩?/div>
V
CE
=80V, R
BE
=50K
鈩?/div>
聠
I
C
=2mA, I
B
=0.1mA
I
C
=2mA, I
B
=0.1mA
I
C
=2mA, V
CE
=1V
I
C
=5mA, V
CE
=5V
f=60MHz
V
CB
=6V, f=1MHz
V
V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
聠T
amb
=100掳C
3-164
1
2
