2SC5508 Datasheet

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2SC5508

TYPICAL CHARACTERISTICS (T

A

= +25 掳C)

Thermal/DC Characteristics

Total Power Dissipation vs.

Ambient Temperature, Case Temperature

250

50

P

T

-T

A

: Free air

P

T

-T

A

: Mounted on ceramic board

(15 mm

脳

15 mm, t = 0.6 mm)

P

T

-T

C

: When case temperature

is specified

Collector Current vs. DC Base Voltage

V

CE

= 2 V

Total Power Dissipation P

T

(mW)

Collector Current I

C

(mA)

150

200

40

150

30

100

20

50

10

0

0

25

50

75

100

125

0

0.2

0.4

0.6

0.8

1.0

1.2

Ambient Temperature T

A

(掳C), Case Temperature T

C

(掳C)

DC Base Voltage V

BE

(V)

50

Collector Current vs. Collector to Emitter Voltage

750

碌

A 700

碌

A

DC Current Gain vs. Collector Current

650

碌

A

600

碌

A

550

碌

A

500

碌

A

450

碌

A

400

碌

A

350

碌

A

300

碌

A

250

碌

A

200

碌

A

150

碌

A

100

碌

A

I

B

= 50

碌

A

200

V

CE

= 2 V

100

Collector Current I

C

(mA)

40

30

DC Current Gain h

FE

20

10

10

1

0.001

0

0

1

2

3

4

5

0.01

0.1

1

10

100

Collector to Emitter Voltage V

CE

(V)

Collector Current I

C

(mA)

Capacitance/f

T

Characteristics

Reverse Transfer Capacitance vs. Collector to Base Voltage

Gain Bandwidth Product vs. Collector Current

30

Reverse Transfer Capacitance C

re

(pF)

0.50

Gain Bandwidth Product f

T

(GHz)

f = 1 MHz

0.40

V

CE

= 3 V

f = 2 GHz

25

20

15

10

5

0

0.30

0.20

0.10

0

0

1.0

2.0

3.0

4.0

5.0

1

10

Collector Current I

C

(mA)

100

Collector to Base Voltage V

CB

(V)

Preliminary Data Sheet P13865EJ1V0DS00

3

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