鈥?/div>
6.0
0.9
425
100
300
20
5
碌A
碌A
碌A
碌A
碌A
Power-down Current
(3)
* These parameters are characterized but not tested.
鈥?Data in 鈥淭yp鈥?column is at 5.0V, 25掳C, unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1=external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
,
MCLR = V
DD
; WDT enabled/disabled as speci铿乪d.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
or V
SS
.
4: For RC osc con铿乬uration, current through Rext is not included. The current through the resistor can be
estimated by the formula Ir = V
DD
/2Rext (mA) with Rext in k鈩?
5: The
鈭?/div>
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD
or I
PD
measurement.
漏
1996 Microchip Technology Inc.
Preliminary
DS30559A-page 93
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