TYPICAL CHARACTERISTICS
18
MTTF FACTOR (HOURS X AMPS
2
)
I
DQ
= 1400 mA
f = 1840 MHz
G
ps
, POWER GAIN (dB)
17
10
9
10
8
16
10
7
15
V
DD
= 24 V
14
0
100
200
300
P
out
, OUTPUT POWER (WATTS) CW
28 V
32 V
10
6
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (掳C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
卤10%
of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
Figure 14. Power Gain versus Output Power
Figure 15. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
10
鈭?0
鈭?0
鈭?0
3.84 MHz
Channel BW
PROBABILITY (%)
1
Output Signal
0.1
(dB)
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK鈭扵O鈭扐VERAGE (dB)
W鈭扖DMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
卤5
MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on
CCDF
Input Signal
鈭?0
鈭?0
鈭?0
鈭?0
鈭?0
鈭?0
鈭?00
鈭?10
鈭?
鈭?.2 鈭?.4 鈭?.6 鈭?.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
鈭扐CPR in 3.84 MHz
Integrated BW
鈭扐CPR in 3.84 MHz
Integrated BW
Figure 16. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 17. Single - Carrier W - CDMA Spectrum
MRF7S18170HR3 MRF7S18170HSR3
10
RF Device Data
Freescale Semiconductor