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MRF7S18170HR3 Datasheet

  • MRF7S18170HR3

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 478.51KB

  • FREESCALE

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Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
IA (Minimum)
B (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25掳C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 372
渭Adc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1400 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DS
= 28 Vdc, I
D
= 1400 mAdc, Measured in Functional Test)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 3.72 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
卤
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
卤
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
鈥?/div>
鈥?/div>
0.87
703
鈥?/div>
鈥?/div>
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
鈥?/div>
4
0.1
2
2.7
5.4
0.15
2.7
鈥?/div>
7.6
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
1
1
渭Adc
渭Adc
渭Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1400 mA, P
out
= 50 W Avg., f = 1807.5 MHz and f =
1877.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @
卤5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
MRF7S18170HR3
MRF7S18170HSR3
Adjacent Channel Power Ratio
Input Return Loss
G
ps
畏
D
PAR
5.8
5.7
ACPR
IRL
鈥?/div>
鈥?/div>
6.2
6.2
- 37
- 15
鈥?/div>
鈥?/div>
- 35
-9
dBc
dB
16
29
17.5
31
19
鈥?/div>
dB
%
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18170HR3 MRF7S18170HSR3
2
RF Device Data
Freescale Semiconductor

MRF7S18170HR3 PDF文件相关型号

MRF7S18170HSR3

MRF7S18170HR3 产品属性

  • RF Devices Discontinuation 28/Jun/2011

  • 250

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 1.81GHz

  • 17.5dB

  • 28V

  • 10µA

  • -

  • 1.4A

  • 50W

  • 65V

  • NI-880

  • NI-880

  • 带卷 (TR)

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