D A T A S H E E T
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Parameter
JEDEC
t
AVAV
t
AVWL
t
ELAX
t
DVEH
t
EHDX
t
GHEL
t
WLEL
t
EHWH
t
ELEH
t
EHEL
Std.
t
WC
t
AS
t
AH
t
DS
t
DH
t
GHEL
t
WS
t
WH
t
CP
t
CPH
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2, 3)
Effective Write Buffer Program
Operation (Notes 2, 4)
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Single Word/Byte Program Operation
(Note 2, 5)
Accelerated Single Word/Byte
Programming Operation (Note 2, 5)
t
WHWH2
t
WHWH2
t
RH
Sector Erase Operation (Note 2)
RESET# High Time Before Write (Note 1)
Per Byte
Per Word
Per Byte
Per Word
Byte
Typ
Word
Byte
Typ
Word
Typ
Min
54
0.5
50
碌s
sec
ns
60
54
碌s
碌s
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
90R
90
Speed Options
100,
100R
100
0
45
45
0
0
0
0
45
30
240
7.5
15
6.25
12.5
60
110,
110R
110
120,
120R
120
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
碌s
碌s
碌s
碌s
碌s
碌s
t
WHWH1
t
WHWH1
Notes:
1. Not 100% tested.
2. See the 鈥淓rase And Programming Performance鈥?section for more information.
3. For 1鈥?6 words (or 1鈥?2 bytes in byte mode) programmed.
4. Effective write buffer specification is based upon a 16-word (or 32-byte) write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
May 16, 2003
Am29LV320MT/B
51