1N4150 Datasheet

  • 1N4150

  • Silicon Epitaxial Planar Diode

  • 37.88KB

  • Vishay

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1N4150
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 85522
Rev. 2, 01-Apr-99
www.vishay.de
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FaxBack +1-408-970-5600
3 (3)

1N4150 产品属性

  • 2,000

  • 分离式半导体产品

  • 单二极管/整流器

  • -

  • 标准

  • 50V

  • 200mA

  • 1V @ 200mA

  • 小信号 =

  • 6ns

  • 100nA @ 50V

  • 2.5pF @ 0V,1MHz

  • 通孔

  • DO-204AH,DO-35,轴向

  • DO-35

  • 散装

1N4150相关型号PDF文件下载

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  • 英文版
    GOLD BONDED DIODES(Low forward voltage, low power consumptio...
    ETC [ETC]
  • 英文版
    GOLD BONDED DIODES(Low forward voltage, low power consumptio...
    ETC [ETC]
  • 英文版
    GOLD BONDED DIODES(Low forward voltage, low power consumptio...
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  • 英文版
    LOW CURRENT OPERATION AT 250 uA
    CDI-DIODE
  • 英文版
    LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
    KNOX
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI
  • 英文版
    500mW LOW NOISE SILION ZENER DIODES
    JGD
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI ...
  • 英文版
    LOW CURRENT OPERATION AT 250 uA
    CDI-DIODE
  • 英文版
    LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
    KNOX
  • 英文版
    500mW LOW NOISE SILION ZENER DIODES
    JGD
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI ...
  • 英文版
    LOW CURRENT OPERATION AT 250 uA
    CDI-DIODE
  • 英文版
    LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
    KNOX
  • 英文版
    500mW LOW NOISE SILION ZENER DIODES
    JGD
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI
  • 英文版
    SILICON 500mA LOW NOISE ZENER DIODES
    MICROSEMI ...
  • 英文版
    LOW CURRENT OPERATION AT 250 uA
    CDI-DIODE
  • 英文版
    LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
    KNOX

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