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2SC2734 Datasheet

  • 2SC2734

  • Silicon NPN Epitaxial

  • 52.79KB

  • hitachi

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2SC2734
Absolute Maximum Ratings
(Ta = 25掳C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
20
11
3
50
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
掳C
掳C
Electrical Characteristics
(Ta = 25掳C)
Item
Collector to base breakdown
voltage
Symbol
V
(BR)CBO
Min
20
11
3
鈥?/div>
鈥?/div>
20
1.4
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
90
3.5
0.9
15
Max
鈥?/div>
鈥?/div>
鈥?/div>
0.5
0.7
200
鈥?/div>
1.5
鈥?/div>
GHz
pF
dB
Unit
V
V
V
碌A
V
Test conditions
I
C
= 10
碌A,
I
E
= 0
I
C
= 1 mA, R
BE
=
鈭?/div>
I
E
= 10
碌A,
I
C
= 0
V
CB
= 10 V, I
E
= 0
I
C
= 10 mA, I
B
= 5 mA
V
CE
= 10 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CC
= 6 V, I
C
= 2 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm),
f
out
= 30 MHz
V
CC
= 6 V, I
C
= 2 mA,
f = 900 MHz,
f
OSC
= 930 MHz (0dBm),
f
out
= 30 MHz
V
CC
= 6 V, I
C
= 5 mA,
f = 930 MHz
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Conversion gain
V
(BR)EBO
I
CBO
V
CE(sat)
h
FE
f
T
Cob
CG
Noise figure
NF
鈥?/div>
9
鈥?/div>
dB
Oscillating output voltage
Note: Marking is 鈥淕C鈥?
V
OSC
鈥?/div>
140
鈥?/div>
mV
2

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