2SC5049
Absolute Maximum Ratings
(Ta = 25掳C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
15
8
1.5
20
150
150
鈥?5 to +150
Unit
V
V
V
mA
mW
掳C
掳C
Electrical Characteristics
(Ta = 25掳C)
Item
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
Note: Marking is 鈥淵A鈥撯€?
I
EBO
h
FE
Cob
f
T
PG
NF
Min
鈥?/div>
鈥?/div>
鈥?/div>
50
鈥?/div>
7.0
12.0
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
120
0.45
10.0
15.0
1.2
Max
10
1
10
250
0.8
鈥?/div>
鈥?/div>
2.5
pF
GHz
dB
dB
Unit
碌A
mA
碌A
Test conditions
V
CB
= 15 V, I
E
= 0
V
CE
= 8 V, R
BE
=
鈭?/div>
V
EB
= 1.5 V, I
C
= 0
V
CE
= 5 V, I
C
= 20 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 10 mA,
f = 900 MHz
V
CE
= 5 V, I
C
= 5 mA,
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC4784.
2
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