Power Transistors
P
C
鈥?Ta
240
16
(1) T
C
=Ta
(2) With a 100
脳
100
脳
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
T
C
=25藲C
14
2SC5244, 2SC5244A
I
C
鈥?V
CE
1000
V
CE
=5V
h
FE
鈥?I
C
Collector power dissipation P
C
(W)
220
200
180
160
140
120
100
80
60
40
(1)
12
10
8
Forward current transfer ratio h
FE
Collector current I
C
(A)
I
B
=1000mA
800mA
600mA
400mA
100
T
C
=100藲C
25藲C
10
鈥?5藲C
200mA
6
4
2
0
1
(3)
20
0
0
20
40
60
80 100 120 140 160
(2)
0
2
4
6
8
10
12
0.1
0.01
0.1
1
10
Ambient temperature Ta (藲C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
鈥?I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1 T
C
=鈥?5藲C
0.03
0.01
0.1
25藲C
100藲C
100
V
BE(sat)
鈥?I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=3.5
I
C
/I
B
=3.5
Area of safe operation, horizontal operation ASO
50
f=64kHz, T
C
=25藲C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
10
Collector current I
C
(A)
40
30
1
T
C
=鈥?5藲C
25藲C
100藲C
20
0.1
10
<1mA
0.01
0.1
0
1
10
100
0
400
800
1200
0.3
1
3
10
30
100
2SC5244
2SC5244A
1600
2000
Collector current I
C
(A)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
R
th(t)
鈥?t
1000
Note: R
th
was measured at Ta=25藲C and under natural convection
(1) P
T
=10V
脳
0.3A (3W) and without heat sink
(2) P
T
=10V
脳
1.0A (10W) and with a 100
脳
100
脳
2mm Al heat sink
100
(1)
Thermal resistance R
th
(t) (藲C/W)
10
(2)
1
0.1
0.01
10
鈥?
10
鈥?
10
鈥?
10
鈥?
1
10
10
2
10
3
10
4
Time t (s)
2
1
2
