碌s鈾?/div>
(A)
100 ms鈾?
1
DC operation
*
(Ta
=
25掳C)
鈾?
Single nonrepetitive pulse
Ta
=
25掳C
0.1 Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren鈥檛
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2
). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
Collector current
I
C
10
VCEO max
100
Collector-emitter voltage V
CE
(V)
4
2001-12-17