2SK3434 Datasheet

  • 2SK3434

  • MOS Field Effect Transistor

  • 48.69KB

  • NEC

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2SK3434
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
3.0卤0.3
10.6 MAX.
10.0
4.8 MAX.
1.0卤0.5
3.6卤0.2
5.9 MIN.
1.3卤0.2
(10)
4.8 MAX.
1.3卤0.2
15.5 MAX.
4
4
1 2 3
1
2
3
6.0 MAX.
12.7 MIN.
1.3卤0.2
1.3卤0.2
12.7 MIN.
8.5卤0.2
0.75卤0.1
2.54 TYP.
0.5卤0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8卤0.2
0.75卤0.3
2.54 TYP.
0.5卤0.2
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
2.8卤0.2
3) TO-220SMD (MP-25Z)
(10)
4
4.8 MAX.
1.3卤0.2
EQUIVALENT CIRCUIT
Drain
1.0卤0.5
8.5卤0.2
Gate
R)
)
0.5
.8R
(
(0
Body
Diode
1.4卤0.2
1.0卤0.3
2.54 TYP. 1
2
11卤0.4
3.0卤0.5
0.5卤0.2
3 2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.8卤0.2
Preliminary Data Sheet D14603EJ1V0DS00
3

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