CED3423/CEU3423
Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
d
d
c
T
A
= 25 C unless otherwise noted
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= -10A
V
DS
= -15V, I
D
= -10A,
V
GS
= -10V
V
DD
= -15V, I
D
= -1A,
V
GS
= -10V, R
GEN
= 6鈩?/div>
Test Condition
V
GS
= 0V, I
D
= -250碌A
V
DS
= -24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250碌A
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -5A
V
DS
= -15V, I
D
= -10A
-1
37
62
4.5
840
170
100
10
6
40
23
12.5
2
2.4
-10
-1.3
20
12
80
45
16
Min
-30
-1
100
-100
-3
45
80
Typ
Max
Units
V
碌A
nA
nA
V
m鈩?/div>
m鈩?/div>
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Gate Threshold Voltage
V
DS
= -15V, V
GS
= 0V,
f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300碌s, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
1
2
3
4
