STPS2030CT/CG/CR
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(c)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
I
R
*
V
F
*
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25掳C
Tj = 125掳C
Tj = 25掳C
Tj = 125掳C
Tj = 25掳C
Tj = 125掳C
V
R
= V
RRM
I
F
=
I
F
=
I
F
=
I
F
=
10 A
10 A
20 A
20 A
Min.
Typ.
0.15
80
0.44
0.34
0.50
0.44
Max.
1.0
160
0.50
0.40
0.58
0.52
Unit
mA
V
Parameter
Junction to case TO-220AB - D
2
PAK - I
2
PAK
Per diode
Total
Coupling
Value
2.2
1.3
0.3
Unit
掳C/W
掳C/W
Pulse test : * tp = 380 碌s,
未
< 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x I
F(AV)
+ 0.012 I
F2(RMS)
Fig. 1:
Conduction losses versus average current.
P
F(AV)
(W)
6
Fig. 2:
Average forward current versus ambient
temperature(未 = 0.5).
I
F(AV)
(A)
11
未
= 0.1
5
未
= 0.2
未
= 0.5
10
R
th(j-a)
=R
th(j-c)
未
= 0.05
9
8
4
未
=1
3
7
6
5
R
th(j-a)
=50掳C/W
2
4
T
1
3
2
T
I
F(AV)
(A)
0
0
1
2
3
4
5
6
7
8
9
未
=tp/T
10
11
12
tp
13
1
0
0
未
=tp/T
25
tp
50
T
amb
(掳C)
75
100
125
150
Fig. 3:
Normalized avalanche power derating
versus pulse duration.
P
ARM
(t
p
)
P
ARM
(1碌s)
1
Fig. 4:
Normalized avalanche power derating
versus junction temperature.
P
ARM
(t
p
)
P
ARM
(25掳C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(碌s)
10
100
1000
T
j
(掳C)
0
0
25
50
75
100
125
150
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