DATA SHEET
MOS FIELD EFFECT TRANSISTOR
碌
PA573T
P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
FOR SWITCHING
The
碌
PA573T is a super-mini-mold device provided with
two MOS FET circuits. It achieves high-density mounting
and saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.2
+0.1
鈥?
0.15
+0.1
鈥?.05
FEATURES
鈥?Two source common MOS FET circuits in package the
same size as SC-70
鈥?Directly driven by ICs having a 3 V power supply
鈥?Automatic mounting supported
0.7
0.65
1.3
2.0 卤0.2
0.65
0.9 卤0.1
1.25 卤0.1
2.1 卤0.1
0 to 0.1
EQUIVALENT CIRCUIT
5
4
PIN CONNECTION
1. Gate 1 (G1)
G
2. Source (common)
3. Gate 2 (G2)
4. Drain 2 (D2)
5. Drain 1 (D1)
Marking: CB
1
2
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
opt
T
stg
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50 %
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATINGS
鈥?0
+7
+100
+200
200 (Total)
150
鈥?5 to +80
鈥?5 to +150
UNIT
V
V
mA
mA
mW
藲C
藲C
藲C
Document No. G11245EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
漏
1996
1
2
3
4
5
6
