Note) Self-supported type package is also prepared.
鈻?/div>
Electrical Characteristics
T
a
=
25掳C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emiter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
Conditions
I
C
=
25 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
I
C
=
2 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
50
500
Min
60
100
100
100
2 500
1
Typ
Max
Unit
V
碌A
碌A
碌A
铮?/div>
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
500 to 1 000
R
800 to 1 500
S
1 200 to 2 500
(5.5)
Publication date: September 2003
SJD00268AED
1
1
2
3
