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2SK3299数据手册封面

2SK3299 Datasheet

  • 2SK3299

  • MOS Field Effect Transistor

  • 79.10KB

  • NEC

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3299
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3299 is N-Channel MOS FET device that features
a low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3299
2SK3299-S
2SK3299-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
FEATURES
鈥ow
gate charge
Q
G
= 34 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 10 A)
鈥ate
voltage rating
卤30
V
鈥ow
on-state resistance
R
DS(on)
= 0.75
鈩?/div>
MAX. (V
GS
= 10 V, I
D
= 5.0 A)
鈥valanche
capability ratings
鈥urface
mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
掳C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25掳C)
Drain Current (Pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
600
卤30
卤10
卤40
1.5
75
150
鈭?5
to +150
10
66.7
V
V
A
A
W
W
掳C
掳C
A
mJ
Total Power Dissipation (T
A
= 25掳C)
Total Power Dissipation (T
C
= 25掳C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
I
AS
E
AS
Note2
Notes 1.
PW
鈮?/div>
10
碌
s, Duty Cycle
鈮?/div>
1%
2.
Starting T
ch
= 25掳C, V
DD
= 150 V, R
G
= 25
鈩?
V
GS
= 20 V
鈫?/div>
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14060EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark
鈥?/div>
shows major revised points.
漏
1999,2000

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2SK3299-ZJ

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