Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
PIN CONFIGURATION (NPN)
1 = BASE
2 = E M ITTER
3 = COLLECTOR
CMBT8050
SOT-23
Formed SMD Package
3
1
2
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Dissipation @ T
a
=25潞C
Operating And Storage Junction
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
, T
stg
VALUE
30
25
6
800
250
- 55 to +125
UNITS
V
V
V
mA
mW
潞C
ELECTRICAL CHARACTERISTICS (T
a
=25潞C unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Output Capacitance
CLASSIFICATIONS
*h
FE
MARKING
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
CMBT8050
100 - 400
05
TEST CONDITION
I
C
=100碌A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10碌A, I
C
=0
V
CB
=15V, I
E
=0
V
EB
=4V, I
C
=0
*I
C
=50mA, V
CE
=1V
I
C
=350mA, V
CE
=1V
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
C
=100mA, V
CE
=10V, f=100MHz
V
CB
=10V, f=1MHz
C
100 - 200
05C
150
20
E
280 - 400
05E
MIN
30
25
6
TYP
MAX
UNITS
V
V
V
nA
nA
100
60
50
500
400
0.5
1.2
V
V
MHz
pF
D
150 - 300
05D
Continental Device India Limited
Data Sheet
Page 1 of 3
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