020B
CY7C1020B
32K x 16 Static RAM
Features
鈥?High speed
鈥?t
AA
= 12, 15 ns
鈥?CMOS for optimum speed/power
鈥?Low active power
鈥?825 mW (max.)
鈥?Low CMOS standby power (L version only)
鈥?2.75 mW (max.)
鈥?Automatic power-down when deselected
鈥?Independent control of upper and lower bits
鈥?Available in 44-pin TSOP II and 400-mil SOJ
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
1
through I/O
8
), is
written into the location specified on the address pins (A
0
through A
15
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
9
through I/O
16
) is written into the location
specified on the address pins (A
0
through A
15
).
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the Write
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
1
to I/O
8
. If Byte High Enable (BHE) is LOW,
then data from memory will appear on I/O
9
to I/O
16
. See the
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
1
through I/O
16
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY7C1020B is available in standard 44-pin TSOP Type II
and 400-mil-wide SOJ packages.
Functional Description
The CY7C1020B is a high-performance CMOS static RAM or-
ganized as 32,768 words by 16 bits. This device has an auto-
matic power-down feature that significantly reduces power
consumption when deselected.
Logic Block Diagram
DATA IN DRIVERS
Pin Configuration
SOJ / TSOP II
Top View
NC
A
3
A
2
A
1
A
0
CE
I/O
1
I/O
2
I/O
3
I/O
4
V
CC
V
SS
I/O
5
I/O
6
I/O
7
I/O
8
WE
A
15
A
14
A
13
A
12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
32K x 16
RAM Array
I/O
1
鈥揑/O
8
I/O
9
鈥揑/O
16
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
5
A
6
A
7
OE
BHE
BLE
I/O
16
I/O
15
I/O
14
I/O
13
V
SS
V
CC
I/O
12
I/O
11
I/O
10
I/O
9
NC
A
8
A
9
A
10
A
11
NC
ROW DECODER
Selection Guide
7C1020B-12
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Commercial
Commercial
Commercial
L
12
140
3
0.5
7C1020B-15
15
130
3
0.5
Cypress Semiconductor Corporation
Document #: 38-05171 Rev. *A
A
8
A
9
A
10
A
11
A
12
A
13
A
14
鈥?/div>
SENSE AMPS
3901 North First Street
鈥?/div>
San Jose
鈥?/div>
CA 95134 鈥?408-943-2600
Revised August 20, 2002
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