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CY7C1366B Datasheet

  • CY7C1366B

  • 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM

  • 549.83KB

  • 32页

  • CYPRESS

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CY7C1366B
CY7C1367B
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
Features
鈥?Supports bus operation up to 225 MHz
鈥?Available speed grades are 225, 200 and 166 MHz
鈥?Registered inputs and outputs for pipelined operation
鈥?Optimal for performance (Double-Cycle deselect)
鈥?Depth expansion without wait state
鈥?3.3V 鈥?% and +10% core power supply (V
DD
)
鈥?2.5V / 3.3V I/O operation
鈥?Fast clock-to-output times
鈥?/div>
2.8 ns (for 225-MHz device)
鈥?3.0 ns (for 200-MHz device)
鈥?3.5 ns (for 166-MHz device)
鈥?Provide high-performance 3-1-1-1 access rate
鈥?/div>
User-selectable burst counter supporting Intel
铮?/div>
Pentium
铮?/div>
interleaved or linear burst sequences
鈥?Separate processor and controller address strobes
鈥?Synchronous self-timed writes
鈥?Asynchronous output enable
鈥?Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
and 165-Ball fBGA packages
鈥?IEEE 1149.1 JTAG-Compatible Boundary Scan
鈥?鈥淶Z鈥?Sleep Mode Option
Functional Description
[1]
The CY7C1366B/CY7C1367B SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
1
), depth-expansion Chip
Enables (CE
2
and CE
3[2]
), Burst Control inputs (ADSC, ADSP,
and ADV), Write Enables (BW
X
, and BWE), and Global Write
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1366B/CY7C1367B operates from a +3.3V core
power supply while all outputs operate with a +3.3V or a +2.5V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
225 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
2.8
250
30
200 MHz
3.0
220
30
166 MHz
3.5
180
30
Unit
ns
mA
mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
1. For best鈥損ractices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3
is for TQFP and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation
Document #: 38-05096 Rev. *B
鈥?/div>
3901 North First Street
鈥?/div>
San Jose
,
CA 95134
鈥?/div>
408-943-2600
Revised February 23, 2004

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