Transistors
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N /
FMG4A / IMH4A / IMH8A
General purpose (dual digital transistors)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
FMG4A / IMH4A / IMH8A
!Features
1) Two DTC114T chips in a EMT or UMT or SMT package.
!Equivalent
circuits
EMG4 / UMG4N
(3)
(2)
(1)
EMH4 / UMH4N
(3)
(2)
(1)
UMH8N
(3)
(2)
(1)
R
1
R
1
R
1
R
1
R
1
(4)
(5)/(6)
(4)
(5)
(6)
R
1
(4) (5)
(6)
FMG4A
(3)
(4)
(5)
IMH4A
(4)
(5)
(6)
IMH8A
(4)
(5)
(6)
R
1
R
1
R
1
R
1
R
1
(2)
(1)
(3)
(2)
(1)
R
1
(3) (2)
(1)
!Absolute
maximum ratings
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N
Power
dissipation
FMG4A / IMH4A / IMH8A
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
50
50
5
100
150(TOTAL)
300(TOTAL)
150
鈭?5
~
+150
Unit
V
V
V
mA
mW
鈭?
鈭?
Junction temperature
Storage temperature
鈭?
120mW per element must not be exceeded.
鈭?
200mW per element must not be exceeded.
掳C
掳C
!Electrical
characteristics
(Ta=25掳C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
鈭桾ransition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
7
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
250
250
10
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.3
600
鈭?/div>
13
Unit
V
V
V
碌A
碌A
V
鈭?/div>
MHz
k鈩?/div>
I
C
=50碌A
I
C
=1mA
I
E
=50碌A
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=10mA/1mA
V
CE
=5V,
I
C
=1mA
V
CE
=10V,
I
E
=鈭?mA,
f=100MHz
1
2
3
