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IRHNA57160
JANSR2N7469U2
100V, N-CHANNEL
REF: MIL-PRF-19500/673
5
TECHNOLOGY
聶
I
D
QPL Part Number
75*A JANSR2N7469U2
75*A JANSF2N7469U2
75*A JANSG2N7469U2
75*A JANSH2N7469U2
IRHNA58160 1000K Rads (Si)
TM
SMD-2
International Rectifier鈥檚 R5 technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25掳C
ID @ VGS = 12V, TC = 100掳C
IDM
PD @ TC = 25掳C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
75*
69
300
250
2.0
卤20
363
75
25
6.0
-55 to 150
300 (for 5s)
3.3 (Typical)
Pre-Irradiation
Units
A
W
W/掳C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
06/09/04
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