Radiation Characteristics
IRHNA57160, JANSR2N7469U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25掳C, Post Total Dose Irradiation
脛脜
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
脙
On-State Resistance (TO-3)
Static Drain-to-Source
脙
On-State Resistance (SMD-2)
Diode Forward Voltage
脙
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
100
2.0
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鈥?/div>
鈥?/div>
鈥?/div>
4.0
100
-100
10
0.013
0.012
1.2
100
1.5
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
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鈥?/div>
4.0
100
-100
25
0.014
0.013
1.2
V
nA
碌A
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鈩?/div>
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
V
GS
= 12V, I
D
= 45A
V
GS
= 12V, I
D
= 45A
V
GS
= 0V, IS = 45A
1. Part numbers IRHNA57160 ( JANSR2N7469U2 ), IRHNA53160 ( JANSF2N7469U2 ) and IRHNA54160 ( JANSG2N7469U2 )
2. Part number IRHNA58160 ( JANSH2N7469U2 )
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm
2
))
36.7
59.8
82.3
Energy
(MeV)
309
341
350
V
DS
(V)
Range
(碌m)
@V
GS
=0V @V
GS
=-5V @V
GS
=-10V @V
GS
=-15V @V
GS
=-20V
39.5
100
100
100
100
100
32.5
100
100
100
35
25
28.4
100
100
80
25
鈥?/div>
120
100
80
VGS
60
40
20
0
0
-5
-10
VDS
-15
-20
Br
I
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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