KSR2102
KSR2102
Switching Application
(Bias Resistor Built In)
鈥?Switching circuit, Inverter, Interface circuit, Driver Circuit
鈥?Built in bias Resistor (R
1
=10K鈩? R
2
=10K鈩?
鈥?Complement to KSR1102
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
R1
B
R2
C
R5 2
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings
T
a
=25掳C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-10
-100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
掳C
掳C
Electrical Characteristics
T
a
=25掳C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
Test Condition
I
C
= -10碌A, I
E
=0
I
C
= -100碌A, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -5mA, I
C
= -10V
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -5V, I
C
= -100碌A
V
CE
= -0.3V, I
C
= -10mA
7
0.9
10
1
-0.5
-3
13
1.1
200
5.5
30
-0.3
V
MHz
pF
V
V
K鈩?/div>
Min.
-50
-50
-0.1
Typ.
Max.
Units
V
V
碌A
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
1
2
3
4
