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MBRS540T3G Datasheet

  • MBRS540T3G

  • ON Semiconductor [SCHOTTKY BARRIER RECTIFIER 5.0 AMPERES 40...

  • 56.26KB

  • ONSEMI

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MBRS540T3
Preferred Device
Surface Mount Schottky
Power Rectifier
The MBRS540T3 employs the Schottky Barrier principle in a large
area metal鈭抰o鈭抯ilicon power diode. State鈭抩f鈭抰he鈭抋rt geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes in
surface mount applications where compact size and weight are critical
to the system.
Features
http://onsemi.com
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Pb鈭扚ree Package is Available
Small Compact Surface Mountable Package with J鈭払end Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
SCHOTTKY BARRIER
RECTIFIER
5.0 AMPERES
40 VOLTS
MARKING
DIAGRAM
SMC
CASE 403
PLASTIC
Mechanical Characteristics
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Case: Epoxy, Molded, Epoxy Meets UL 94 V鈭? @ 0.125 in
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Weight: 217 mg (approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal
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Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260掳C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Rating: Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
Device Meets MSL 1 Requirements
B540
Y
W
YWW
B540
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
MBRS540T3
Package
SMC
SMC
(Pb鈭扚ree)
Shipping
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2500/Tape & Reel
2500/Tape & Reel
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
R
, T
C
= 105掳C)
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave,
20 KHz, T
C
= 80掳C)
Non鈭扲epetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Value
40
Unit
V
MBRS540T3G
5
10
A
A
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
I
FSM
190
A
Tstg
T
J
dv/dt
鈭?5 to +150
鈭?5 to +125
10,000
掳C
掳C
V/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not nor-
mal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
漏
Semiconductor Components Industries, LLC, 2004
1
September, 2004 鈭?Rev. 3
Publication Order Number:
MBRS540T3/D

MBRS540T3G 产品属性

  • 10

  • 分离式半导体产品

  • 单二极管/整流器

  • -

  • 肖特基

  • 40V

  • 5A

  • 500mV @ 5A

  • 快速恢复 = 200mA（Io）

  • -

  • 300µA @ 40V

  • -

  • 表面贴装

  • DO-214AB，SMC

  • SMC

  • Digi-Reel®

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