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MRF7S19120NR1 Datasheet

  • MRF7S19120NR1

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 499.39KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF7S19120N
Rev. 0, 9/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
鈥?/div>
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1200 mA, P
out
= 36 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?18 dB
Drain Efficiency 鈥?32%
Device Output Signal PAR 鈥?6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset 鈥?- 38.5 dBc in 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW
Peak Tuned Output Power
鈥?/div>
P
out
@ 1 dB Compression Point
w
120 W CW
Features
鈥?/div>
100% PAR Tested for Guaranteed Output Power Capability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
鈥?/div>
Designed for Digital Predistortion Error Correction Systems
鈥?/div>
225掳C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF7S19120NR1
1930 - 1990 MHz, 36 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 1730 - 02
TO - 270 WBL - 4
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
掳C
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81掳C, 120 W CW
Case Temperature 80掳C, 36 W CW
Symbol
R
胃JC
Value
(2,3)
0.43
0.51
Unit
掳C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S19120NR1
1
RF Device Data
Freescale Semiconductor

MRF7S19120NR1 产品属性

  • 500

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 18dB

  • 28V

  • 10µA

  • -

  • 1.2A

  • 36W

  • 65V

  • TO-270AB

  • TO-270 WB-4

  • 带卷 (TR)

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