Ordering number : EN2195F
Diffused Junction Type Silicon Diode
SVC203CP
Varactor Diode for FM Low-Voltage
Electronic Tuning Use
Features
鈥?Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.
鈥?Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).
鈥?Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).
Absolute Maximum Ratings
at Ta=25掳C
Reverse Voltage
Junction Temperature
Storage Temperature
VR
Tj
Tstg
16
125
鈥?5 to +125
min
16
typ
unit
V
掳C
掳C
max
50
65.98
25.11
13.40
unit
V
nA
pF
pF
pF
Electrical Characteristics
at Ta=25掳C
Breakdown Voltage
Reverse Current
Interterminal Capacitance*
V(BR)R
IR
C1.0V
C6.0V
C9.0V
Q
CR
鈭咰m
Quality Factor
Capacitance Ratio
Matching Tolerance
IR=1碌A
VR=10V
VR=1.0V, f=1MHz
58.80
VR=6.0V, f=1MHz
18.72
VR=9.0V, f=1MHz
10.84
VR=3.0V, f=1MHz
60
C1.0V/C9.0V
4.6
VR=1.0V (Cmax
|C
min)
脳100
VR=6.0V
Cmin
VR=9.0V
6.5
5.5
11.8
%
%
%
* : Capacitance value of one diode
Electrical Connection
Package Dimensions
1169A
(unit : mm)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0397GI/52595GI (KOTO)1200MO/O268MO/6187AT, TS 8-9952 No.2195-1/3
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