SAMWIN
General Description
Features
N-Channel MOSFET
BV
DSS
(Minimum)
R
DS(ON)
(Maximum)
I
D
Qg (Typical)
P
D
(@TC=25
鈩?
: 600 V
: 5.0 ohm
: 2.0 A
: 16 nc
: 50 W
SW2N60
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and SMPS. It鈥檚 typical application is TV and
monitor.
D
G
TO-252
TO-220
S
Absolute Maximum Ratings
Symbol
Parameter
TO-220
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
,T
J
T
L
Drain to Source Voltage
Continuous Drain Current (@Tc=25鈩?
Continuous Drain Current (@Tc=100鈩?
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25鈩?
Derating Factor above 25鈩?/div>
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from
Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
50
0.4
-55~+150
300
5.0
5.0
42
0.34
(Note 1)
2.0
1.67
8.0
卤30
110
4.2
600
1.8
1.47
7.2
Value
TO-251(2)
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/鈩?/div>
鈩?/div>
鈩?/div>
Thermal Characteristics
Value
Symbol
R
胃JC
R
胃CS
R
胃JA
Units
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Max
TYP.
Max
TO-220
2.4
0.5
62.5
TO-251(2)
2.9
鈩?
W
鈩?
W
鈩?
W
1/6
REV0.2
04.11.1
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