AT49BV6416 Datasheet

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The VPP pin provides data protection and faster programming times. When the V

PP

input is

below 0.7V, the program and erase functions are inhibited. When V

PP

is at 1.65V or above, nor-

mal program and erase operations can be performed. With V

PP

at 10.0V, the program (dual-

word program command) operation is accelerated.

A six-byte command (Enter Single Pulse Program Mode) to remove the requirement of entering

the three-byte program sequence is offered to further improve programming time. After entering

the six-byte code, only single pulses on the write control lines are required for writing into the

device. This mode (Single Pulse Word Program) is exited by powering down the device, by tak-

ing the RESET pin to GND or by a high-to-low transition on the V

PP

input. Erase, Erase

Suspend/Resume, Program Suspend/Resume and Read Reset commands will not work while in

this mode; if entered they will result in data being programmed into the device. It is not recom-

mended that the six-byte code reside in the software of the final product but only exist in external

programming code.

2. Pin Configurations

Pin Name

I/O0 - I/O15

A0 - A21

CE

OE

WE

RESET

WP

VPP

VCCQ

Pin Function

Data Inputs/Outputs

Addresses

Chip Enable

Output Enable

Write Enable

Reset

Write Protect

Write Protection and Power Supply for Accelerated Program

Operations

Output Power Supply

2.1

TSOP Top View (Type 1)

A15

A14

A13

A12

A11

A10

A9

A8

A21

A20

WE

RESET

VPP

WP

A19

A18

A17

A7

A6

A5

A4

A3

A2

A1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

VCCQ

GND

I/O15

I/O7

I/O14

I/O6

I/O13

I/O5

I/O12

I/O4

VCC

I/O11

I/O3

I/O10

I/O2

I/O9

I/O1

I/O8

I/O0

OE

GND

CE

A0

2

AT49BV6416(T)

3451C鈥揊LASH鈥?/05

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