AT49BV6416 Datasheet

  • AT49BV6416

  • 64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory

  • 612.00KB

  • 31页

  • ATMEL   ATMEL

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AT49BV6416(T)
22. Program Cycle Characteristics
Symbol
t
BP
t
SEC1
t
SEC2
t
ES
t
PS
t
ERES
Parameter
Word Programming Time
Sector Erase Cycle Time (4K word sectors)
Sector Erase Cycle Time (32K word sectors)
Erase Suspend Time
Program Suspend Time
Delay between Erase Resume and Erase Suspend
500
Min
Typ
15
200
700
15
10
Max
Units
碌s
ms
ms
碌s
碌s
碌s
23. Program Cycle Waveforms
OE
(1)
CE
I/O0 -I/O15
XXAA
XX55
XXA0
INPUT
DATA
A0 -A21
555
AAA
555
ADDR
WE
24. Sector, Plane or Chip Erase Cycle Waveforms
OE
(1)
CE
I/O0 -I/O15
XXAA
XX55
XX80
XXAA
XX55
Note3
A0 -A21
555
AAA
555
555
AAA
Note2
WE
Notes:
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 555. For plane or sector erase, the address depends on what plane or sector is to be
erased. (See note 4 and 6 under
鈥淐ommand Definition Table鈥?on page 12.)
3. For chip erase, the data should be XX10H, for plane erase, the data should be XX20H, and for sector erase, the data should
be XX30H
4. The waveforms shown above use the WE controlled AC Word Load Waveforms.
23
3451C鈥揊LASH鈥?/05

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